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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD427 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) *High Power Dissipation: PC= 80W(Max)@TC=25 *Complement to Type 2SB557 APPLICATIONS *Designed for power amplifier applications. *Recommended for 50W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IE PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage w ww scs .i VALUE 120 120 5 8 -8 80 150 -65~150 UNIT V .cn mi e V V A A W Collector Current-Continuous Emitter Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance CONDITIONS IC= 0.1A; IB= 0 IE= 10mA; IC= 0 IC= 5A; IB= 0.5A B 2SD427 MIN 120 5 TYP. MAX UNIT V V 2.5 2.0 0.1 0.1 140 V V mA mA IC= 5A; VCE= 5V VCB= 60V; IE= 0 Current-Gain--Bandwidth Product hFE-1 Classifications R 40-80 O 70-140 w w w. .cn mi cse is VEB= 5V; IC= 0 IC= 1A; VCE= 5V 40 IC= 5A; VCE= 5V 20 IE= 0; VCB= 10V; f= 1MHz IC= 1A; VCE= 5V 170 5 pF MHz isc Websitewww.iscsemi.cn |
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